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cystech electronics corp. spec. no. : c921q8 issued date : 2016.11.07 revised date : page no. : 1/12 MTC4505AQ8 cystek product specification n- and p-channel enhancement mode power mosfet MTC4505AQ8 n-ch p-ch bv dss 30v -30v i d @v gs =10v(-10v), t a =25 c 12a -10a r dson (typ.) @v gs =(-)10v 8.8 m 14.6 m r dson (typ.) @v gs =(-)4.5v 11.3m 20.3 m features ? simple drive requirement ? low on-resistance ? fast switching speed ? pb-free lead plating and halogen-free package equivalent circuit outline sop-8 ordering information device package shipping MTC4505AQ8-0-t3-g sop-8 (pb-free lead plating and halogen-free package) 2500 pcs / tape & reel MTC4505AQ8 d2 d2 d1 d1 g gate s source g2 s2 g1 s1 pin 1 d drain environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pcs / tape & reel, 13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c921q8 issued date : 2016.11.07 revised date : page no. : 2/12 MTC4505AQ8 cystek product specification absolute maximum ratings (tc=25 c, unless otherwise noted) limits parameter symbol n-channel p-channel unit drain-source breakdown voltage bv dss 30 -30 gate-source voltage v gs 20 20 v continuous drain current @t a =25 c, v gs =10v (note 1) 12 -10 continuous drain current @t a =70 c, v gs =10v (note 1) i d 9.6 -8 pulsed drain current (note 2) i dm 48 -40 a p d 2.0 w total power dissipation @t a =25 c (note 1) linear derating factor 0.016 w / c operating junction and storage temperature range tj, tstg -55~+150 c thermal resistance, junction-to-ambient (note 1) r ja 62.5 thermal resistance, junction-to-case r jc 25 c/w note : 1.surface mounted on 1 in2 copper pad of fr-4 board, 135 c/w when mounted on minimum copper pad 2. pulse width limited by maximum junction temperature n-channel electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 30 - - v v gs =0v, i d =250 a bv dss / tj - 0.03 - v/ c reference to 25 c, i d =250 a v gs(th) 1.0 - 2.5 v v ds =v gs , i d =250 a i gss - - 100 na v gs =20v, v ds =0v - - 1 v ds =24v, v gs =0v i dss - - 25 a v ds =24v, v gs =0v, tj=70 c - 8.8 12 i d =9a, v gs =10v *r ds(on) - 11.3 16 m i d =5a, v gs =4.5v *g fs - 9 - s v ds =10v, i d =9a dynamic ciss - 773 1160 coss - 89 - crss - 67 - pf v ds =25v, v gs =0v, f=1mhz *t d(on) - 8.4 - *t r - 18.6 - *t d(off) - 34.6 - *t f - 6.8 - ns v ds =15v, i d =1a, v gs =10v, r g =3.3 , r d =15 *qg - 9.7 15 *qgs - 5.3 - *qgd - 14 - nc v ds =24v, i d =9a, v gs =4.5v source-drain diode *v sd - 0.76 1.2 v v gs =0v, i s =1.7a *trr - 8.3 - ns *qrr - 3.8 - nc i f =9a, v gs =0v, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c921q8 issued date : 2016.11.07 revised date : page no. : 3/12 MTC4505AQ8 cystek product specification p-channel electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -30 - - v v gs =0v, i d =-250 a bv dss / tj - -0.03 - v/ c reference to 25 c, i d =-250 a v gs(th) -1.0 - -2.5 v v ds =v gs , i d =-250 a i gss - - 100 na v gs =20v, v ds =0v - - -1 v ds =-24v, v gs =0v i dss - - -25 a v ds =-24v, v gs =0v, tj=70 c - 14.6 19 i d =-8a, v gs =-10v *r ds(on) - 20.3 28 m i d =-4a, v gs =-4.5v *g fs - 14 - s v ds =-10v, i d =-8a dynamic ciss - 1425 2140 coss - 151 - crss - 133 - pf v ds =-25v, v gs =0v, f=1mhz *t d(on) - 11.6 - *t r - 20.4 - *t d(off) - 61.8 - *t f - 13.4 - ns v ds =-15v, i d =-1a, v gs =-10v, r g =3.3 , r d =15 *qg - 17.7 27 *qgs - 4.7 - *qgd - 8.5 - nc v ds =-24v, i d =-8a, v gs =-4.5v source-drain diode *v sd - -0.78 -1.2 v v gs =0v, i s =-1.7a *trr - 12.4 - ns *qrr - 7.2 - nc i f =-8a, v gs =0v, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% recommended soldering footprint
cystech electronics corp. spec. no. : c921q8 issued date : 2016.11.07 revised date : page no. : 4/12 MTC4505AQ8 cystek product specification n-channel typical characteristics typical output characteristics 0 4 8 12 16 20 24 28 32 36 40 012345678910 v ds , drain-source voltage(v) i d , drain current (a) 10v, 9v, 8v, 7v, 6v, 5v, 4v v gs =3v v gs =2.5v brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 100 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =4.5v v gs =10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 30 60 90 120 150 024681 0 drain-source on-state resistance vs junction tempearture 0 0.4 0.8 1.2 1.6 2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =9a r dson @tj=25c : 8.8 m typ. v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =9a
cystech electronics corp. spec. no. : c921q8 issued date : 2016.11.07 revised date : page no. : 5/12 MTC4505AQ8 cystek product specification n-channel typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0 5 10 15 20 25 30 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) v ds =10v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 048121620 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =9a v ds =24v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) t a =25c, tj=150c v gs =10v, r ja =62.5c/w single pulse dc 100ms r dson limited 100 s 10ms 1ms 1s maximum drain current vs junction temperature 0 2 4 6 8 10 12 14 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c v gs =10v r ja =62.5c/w
cystech electronics corp. spec. no. : c921q8 issued date : 2016.11.07 revised date : page no. : 6/12 MTC4505AQ8 cystek product specification n-channel typical characteristics(cont.) typical transfer characteristics 0 4 8 12 16 20 24 28 32 36 40 012345 v gs , gate-source voltage(v) i d , drain current(a) v ds =10v single pulse power rating, junction to ambient (note on page 2) 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width(s) power (w) t j(max) =150c t a =25c r ja =62.5c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =62.5c/w
cystech electronics corp. spec. no. : c921q8 issued date : 2016.11.07 revised date : page no. : 7/12 MTC4505AQ8 cystek product specification p-channel typical characteristics typical output characteristics 0 5 10 15 20 25 30 35 40 012345678910 -v ds , drain-source voltage(v) -i d , drain current (a) -v gs =2.5v 10v, 9v, 8v, 7v, 6v, 5v, 4v 3v 3.5v brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage -i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 0.01 0.1 1 10 100 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) -v gs =4.5v -v gs =10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 02468 -i dr , reverse drain current(a) -v sd , source-drain voltage(v) 10 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 40 80 120 160 200 240 280 320 360 400 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance -v gs =10v, -i d =8a r dson @tj=25c : 14.6m typ. -v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) -i d =8a
cystech electronics corp. spec. no. : c921q8 issued date : 2016.11.07 revised date : page no. : 8/12 MTC4505AQ8 cystek product specification p-channel typical characteristics(cont.) capacitance vs drain-to-source voltage 100 1000 10000 0 5 10 15 20 25 30 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -v gs(th) , normalized threshold voltage -i d =250 a -i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -i d , drain current(a) g fs , forward transfer admittance(s) -v ds =10v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 qg, total gate charge(nc) -v gs , gate-source voltage(v) i d =-8a v ds =-24v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-source voltage(v) -i d , drain current(a) t a =25c, tj=150c v gs =10v, r ja =62.5c/w single pulse dc r dson limited 100 s 1ms 10ms 100ms 1s maximum drain current vs junction temperature 0 2 4 6 8 10 12 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c -v gs =10v r ja =62.5c/w
cystech electronics corp. spec. no. : c921q8 issued date : 2016.11.07 revised date : page no. : 9/12 MTC4505AQ8 cystek product specification p-channel typical characteristics(cont.) typical transfer characteristics 0 5 10 15 20 25 30 35 40 0123456 v gs , gate-source voltage(v) i d , drain current(a) v ds =10v single pulse power rating, junction to ambient (note on page 2) 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width(s) power (w) t j(max) =150c t a =25c r ja =62.5c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =62.5c/w
cystech electronics corp. spec. no. : c921q8 issued date : 2016.11.07 revised date : page no. : 10/12 MTC4505AQ8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c921q8 issued date : 2016.11.07 revised date : page no. : 11/12 MTC4505AQ8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 5 +1/-1 seconds 260 +0/-5 c recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c921q8 issued date : 2016.11.07 revised date : page no. : 12/12 MTC4505AQ8 cystek product specification sop-8 dimension *: typical millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 1.350 1.750 0.053 0.069 e 3.800 4.000 0.150 0.157 a1 0.100 0.250 0.004 0.010 e1 5.800 6.200 0.228 0.244 a2 1.350 1.550 0.053 0.061 e *1.270 *0.050 b 0.330 0.510 0.013 0.020 l 0.400 1.270 0.016 0.050 c 0.170 0.250 0.006 0.010 0 8 0 8 d 4.700 5.100 0.185 0.200 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . marking: device name date code 4505ss 8-lead sop-8 plastic package cystek package code: q8

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